Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device  1  includes a substrate  2  having on a main surface thereof a central area and a peripheral area which surrounds the central area and is exposed, a semiconductor layer  4  which is formed on the main surface of the substrate  2 , is made of a material harder than the substrate  2 , is in the shape of a mesa, and has a steep side over the exposed peripheral area, and an insulating film  12 S provided on a side surface of the semiconductor layer  4.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.12/244,927, filed Oct. 3, 2008, and is based upon and claims the benefitof priority from the prior Japanese Patent Application No. 2007-340972filed on Dec. 28, 2007, the entire contents of both of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor device and a method ofmanufacturing the same, and more particularly relates to a semiconductordevice including semiconductor layers which are placed on a substrateand are harder than the substrate, and a method of manufacturing such asemiconductor device.

2. Description of the Related Art

A semiconductor device including a GaN-group electronic device withexcellent high frequency performance, more particularly an HEMT (highelectron mobility) transistor, is well-known as disclosed in JapanesePatent Publication 1991-003936. The HEMT includes a device functionlayer, a pair of ohmic (low resistance) electrodes, and a gateelectrode.

The device function layer is constituted by a GaN layer and analuminum-gallium-nitride (AlGaN) layer placed on the GaN layer. With thedevice function layer, a two-dimensional electron gas layer (2DEG) isproduced near an interface between the AlGaN layer and the GaN layer.The 2DEG layer functions as a channel region. The pair of ohmicelectrodes are placed on the AlGaN layer of the device function layer,and are used as a source electrode and a drain electrode. The gateelectrode is in Schottky junction on the AlGaN layer of the devicefunction layer between the ohmic electrodes, and controls a flow ofelectrons in the two-dimensional electron gases.

A main semiconductor layer including the device function layer of theHEMT is stacked on the substrate. Usually, the main semiconductor layeris formed on the substrate by the epitaxial growth. A GaN substrate, asilicon-carbide (SiC) substrate or a sapphire substrate is used as thesubstrate for the main semiconductor layer. The GaN substrate is optimumfor the growth of the main semiconductor layer mainly made of a nitridegroup semiconductor. The SiC or sapphire substrate is used assuming thata buffer layer is present on the substrate side of the mainsemiconductor layer made of a nitride group semiconductor.

Recently, it is expected that a single-crystal silicon (Si) substratewill be practically used for a wafer in a substrate manufacturingprocess of the foregoing semiconductor device. The use of the Sisubstrate is effective in reducing a manufacturing cost, enlarging thesubstrate, and improving device performance.

The semiconductor devices including the HEMT and the manufacturingmethod thereof seem to suffer from the following problems.

In order to manufacture a plurality of semiconductor devices(semiconductor chips) at one time, the GaN layer and the AlGaN layer aresequentially placed on a buffer layer which is made of a nitride groupsemiconductor layer and extends over an Si wafer, thereby obtaining thedevice function layer. The buffer layer, GaN layer and AlGaN layerundergo the epitaxial growth. Thereafter, the ohmic electrodes and gateelectrode are formed on the AlGaN layer. Then, the Si wafer, bufferlayer on the Si wafer, GaN layer and AlGaN layer are subject to thescribing (or dicing). The Si wafer is cut and is segmented intosemiconductor devices. The GaN layer and AlGaN layer are used as thedevice function layer in the segmented semiconductor devices.

In the segmenting process, the nitride group semiconductor (i.e. themain semiconductor layer) constituting the buffer layer and the devicefunction layer is however harder than the Si wafer, so that sidesurfaces of the main semiconductor layer of the segmented semiconductorchips tend to crack. Especially, when a rear surface of thesemiconductor device (i.e. a rear surface of the Si wafer) and thesource electrode are electrically connected, a high voltage should bekept in a depth direction (longitudinally) of the device function layer.This leads to leakage or collapse of currents because of cracks on theside surface of the device function layer.

SUMMARY OF THE INVENTION

This invention has been contemplated in order to overcome problems ofthe related art, and is intended to provide a semiconductor device whichcan prevent cracks on a side surface of a semiconductor layer, and canreduce leakage currents or collapse of currents.

Further, the invention provides a semiconductor manufacturing methodwhich can prevent cracks on side surfaces of semiconductor layers, andboost manufacturing yield.

According to a first aspect of the of the embodiment of the invention,there is provided a semiconductor device which includes: a substratehaving on a main surface thereof a central area and a peripheral areawhich surrounds the central area and is exposed; a semiconductor layerwhich is formed on the main surface of the substrate, is made of amaterial harder than the substrate, is in the shape of a mesa, and has asteep side over the exposed peripheral area; and an insulating filmprovided on a side surface of the semiconductor layer.

In the foregoing semiconductor device, the substrate is preferably madeof a IV or III-V group compound semiconductor material, and thesemiconductor layer includes nitride group semiconductor layers.Further, the semiconductor layer preferably includes on the side surfacethereof an ion implanting layer which suppresses leakage currents. Stillfurther, the semiconductor layer has a hetero junction, and includes atwo-dimensional electron gas layer near an interface of the heterojunction.

In accordance with a second aspect of the invention, there is provided asemiconductor device manufacturing method which includes: making asemiconductor forming layer on a main surface of a substrate, thesemiconductor forming layer being made of a material harder than thesubstrate; etching a part of the semiconductor layer in the shape of amesa until the mesa reaches the main surface of the substrate, andmaking a plurality of semiconductor layers which are regularly segmentedfrom the semiconductor forming layer in a first direction along the mainsurface of the substrate and in a second direction which intersects thefirst direction, the semiconductor layer being in the shape of a mesaand having steep sides;

making an insulating film on the side surface of the semiconductorlayer; and segmenting the substrate at the partly mesa-etched area ofthe semiconductor layer. It is preferable that this method furtherincludes implanting impurities into the side surface of thesemiconductor layer after making the semiconductor layers, and formingan ion implanting layer on the surface of the semiconductor layer, theion implanting layer suppressing leakage currents. Further, it ispreferable that the substrate is made of a IV or III-V group compoundsemiconductor material, and the semiconductor forming layer is made in aprocess where the semiconductor layer including nitride groupsemiconductor layers is made. Still further, it is preferable thatcrystalline characteristics of the semiconductor layer at a peripheralarea thereof are reduced or alleviated compared at a central areathereof, or the semiconductor layer at the peripheral area is made tohave a high withstand voltage while the ion implanting layer is beingformed.

This invention provides the semiconductor device which can preventcracks on side surfaces of semiconductor layer, and can reduce leakagecurrents or collapse of currents.

Further, the invention provides a semiconductor manufacturing methodwhich can prevent cracks on side surface of semiconductor layer, andboost manufacturing yield.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of an essential part of a semiconductordevice in a first embodiment of the invention.

FIG. 2 is a top plan view of the semiconductor device in FIG. 1.

FIG. 3 is a cross-sectional view showing how the semiconductor device inFIG. 1 is made in a first manufacturing process.

FIG. 4 is a cross-sectional view showing a second manufacturing process.

FIG. 5 is a cross-sectional view showing a third manufacturing process.

FIG. 6 is a cross-sectional view showing a fourth manufacturing process.

FIG. 7 is a cross-sectional view showing a fifth manufacturing process.

FIG. 8 is a cross-sectional view showing a sixth manufacturing process.

FIG. 9 is a cross-sectional view showing a seventh manufacturingprocess.

FIG. 10 is a cross-sectional view showing an eighth manufacturingprocess.

FIG. 11 is a top view of an essential part of a wafer prior to ascribing step in the manufacturing process in the first embodiment.

FIG. 12 is a cross-sectional view showing how a semiconductor device ismanufactured in a second embodiment of the invention.

FIG. 13 is a cross-sectional view of a semiconductor device in a thirdembodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

One or more implementations of the present invention will now bedescribed with reference to the attached drawings, wherein likereference numerals are used to refer to like elements throughout, andwherein the illustrated structures are not necessarily drawn to scale.The invention provides a semiconductor device and a method ofmanufacturing the same.

The invention will be described by means of specific embodiments andapplications thereof, numerous modification and variations could be madethereto without departing from the scope of the invention set forth inthe claims.

First Embodiment

In a first embodiment, the invention is applied to an electric powersemiconductor device including an HMET, and a method for manufacturingsuch a semiconductor device.

[Configuration of Semiconductor Device]

Referring to FIG. 1 and FIG. 2, the electric power semiconductor device1 includes: a substrate 2 having a central area 102 on its main surfaceand a peripheral area 101 exposed around the central area 102; a mainsemiconductor layer (a semiconductor layer) 20 being in the shape of amesa and sloping on the exposed peripheral area 101 of the substrate 2;and an insulating film 12S on a side surface of the main semiconductorlayer 20.

In the first embodiment, the substrate 2 is made of a IV-groupsemiconductor material, and is practically a single-crystal Si substratewhich is 300 μm to 2.0 nm thick, for instance. The Si substrate has beenwidely applied to technologically established Si electronic devices andmethods of manufacturing such Si electronic devices. The use of the Sisubstrate is effective in reducing a cost of the substrate 2, inenlarging the substrate 2, and in improving the device performance. Thesubstrate 2 shown in FIG. 1 and FIG. 2 is in a segmented state (afterthe dicing or scribing) in the manufacturing process. The substrate 2 islengthwise rectangular as shown in FIG. 2. Alternatively, it may be inthe shape of a square, a polygon having five or more straight sides andangles, or may have rounded corners. Before the segmentation, thesubstrate 2 is a wafer (2W).

When the substrate 2 (i.e. a semiconductor chip) measures is 0.3 mm×0.3mm to 5.0 mm×5.0 mm, the peripheral area 101 has a width of 10 μm to 100μm between a diced surface of the substrate 2 to the main semiconductorlayer 20, and includes a dicing margin for a dicing cutter (or dicingblade), and a margin for preventing cracks in the main semiconductorlayer 20 during the dicing.

The main semiconductor layer 20 is placed on a crystalline surface ofthe substrate 2, i.e. a single-crystal S1 substrate (111), and is in theshape of a mesa. In the first embodiment, the main semiconductor layer20 has a device function layer 4 on the substrate 2, and a buffer layer3 interposed between the substrate 2 and the device function layer 4.The main semiconductor layer 20, device function layer 4 and bufferlayer 3 are in the shape of the mesa, i.e. they have flat tops and steepsides. In short, a bottom and a top of the main conductor layer 20 areeffectively parallel, and the top is smaller than the bottom thereof, asshown in FIG. 1. In this case, an angle θ of gradient of the mainsemiconductor layer 20 (an angle between the bottom and top of the mainsemiconductor layer 20) is 10 degrees to 70 degrees, for instance.

In order to secure continuity of crystalline growth of the devicefunction layer 4, the buffer layer 3 is made of a plurality ofaluminum-nitride (AlN) layers and a plurality of GaN layers which arealternately stacked. In the first embodiment, a total and finalthickness of the buffer layer 3 is designed to be 0.5 μm to 10.0 μm, forinstance.

The device function layer 4 is made of a III group nitride semiconductormaterial which is harder than the Si material of the substrate 2. Atypical III group nitride semiconductor materials are denoted byAl_(x)In_(y)Ga_(1-x-y)N (1≦x≦1, 0≦y≦1, 0≦x+y≦1). In the firstembodiment, the device function layer 4 includes a GaN layer 41 on anupper surface of the buffer layer 3, and an AlGaN layer 42 on the uppersurface of the GaN layer 41, as shown in FIG. 1. GaN is one of mostwell-known III-V group hexagonal compound semiconductors containingnitride.

In the first embodiment, the GaN layer 41 is designed to be 0.5 μm to10.0 μm thick, and is actually 2.5 μm to 3.5 μm thick, for instance. TheAlGaN layer 42 is designed to be 5.0 nm to 100.0 nm thick, for instance.A two-dimensional electron gas layer 43 is made near a hetero-junctioninterface between the GaN layer 41 and the AlGaN layer 42 due tospontaneous polarization of the GaN layer 41 and the AlGaN layer 42, andpiezopolarization. The two-dimensional electron gas layer 43 functionsas a channel region assuring high electron mobility in the HEMT.

The semiconductor device 1 of the first embodiment is provided with theHMET, which includes the device function layer 4 producing thetwo-dimensional electron gas layer 43, a pair of ohmic electrodes 5S and5D which are placed on the AlGaN layer 42 of the device function layer 4and are apart from one another, and a gate electrodes 7G. The gateelectrode 7 is placed between each pair of the ohmic electrodes 5S and5D on the AlGaN layer 42.

The ohmic electrode 5S is used as a source electrode while the ohmicelectrode 5D is used as a drain electrode, for instance. The ohmicelectrodes 5S and 5D are constituted by titanium (Ti) layers andaluminum (Al) layers which are stack on top of another, for instance.The Ti layers are 10 nm to 50 nm thick, and the Al layers are 100 nm to1,000 nm thick.

A passivation film 6 is placed on the device function layer 4 exceptwhere the gate electrode 7G and the ohmic electrodes 5S and 5D arepresent. The passivation film 6 is a silicon oxide film, a siliconnitride film, a silicon oxy-nitride (SiON) film, or the like, which isprepared by the plasma chemical deposition (PE-CVD) process. When thesilicon oxide film is used, it is 200 nm to 1,000 nm thick, forinstance.

The gate electrode 7G is placed on the passivation film 6, and isconnected by the Shottkey junction to a surface of the AlGaN layer 42via a connection hole 6HG in the passivation film 6. The gate electrode7G is made of a plurality of titanium (Ti) layers, nickel (Ni) layersand gold (Au) layers, all of which are stacked on top of another. Forinstance, the Ti layers are 50 nm to 500 nm thick, the Ni layers are 100nm to 500 nm thick, and the Au layers are 0.1 μm to 1.0 μm thick.

Another passivation film 10 is placed on the passivation film 6extending over the gate electrode 7G and the electrode 7S. Thepassivation film 10 is a silicon oxide film, a silicon nitride film, asilicon oxy-nitride (SiON) film, or the like, which is prepared by theplasma chemical deposition (PE-CVD) process. The silicon oxide film is200 nm to 1,000 nm thick, for instance.

Referring to FIG. 2, the substrate 2 and the main semiconductor layer 20are rectangular. The main semiconductor layer 20 is one size smallerthan the substrate 2. An external source terminal 7SP is provided alongan upper side 401 at the peripheral area of the main semiconductor layer20. An external drain terminal 7DP is provided along a lower side 402 atthe peripheral area of the main semiconductor layer 20. The lower side402 faces with the upper side 401.

The external source terminal 7SP is electrically connected to the ohmicelectrodes 5S which extend in a direction from the upper side 401 to thelower side 402. The ohmic electrodes 5S are arranged at intervals in asecond direction extending from a left side 403 to a right side 404. Theright side 404 faces with the left side 403.

The external drain terminal 7DP is electrically connected to the ohmicelectrodes 5D which are effectively parallel to the ohmic electrodes 5Sand extend at intervals in the first direction. The ohmic electrodes 5Sand 5D are alternately arranged.

An external gate terminal 7GP is placed between adjacent ohmicelectrodes 5S and 5D, and is electrically connected to the gateelectrode 7G extending in the first direction.

In the first embodiment shown in FIG. 1 and FIG. 2, an ion implantinglayer 11S and an insulating film 12S are provided on the side surfacesof the buffer layer 3 and device function layer 4, both of which assurerelatively high insulation and suppress leakage currents. The ionimplanting layer 11S is formed by implanting ions into the side surfaceof the main semiconductor layer 20. The inventors of this inventioninfer that the ion implanting layer 11S lowers or alleviates crystallinecharacteristics, and raises resistance by increasing crystal defects onthe side surface of the device function layer 4 and the side surface ofthe buffer layer 3 compared with the center of the device function layer4 and the center of the buffer layer 3.

The ion implanting layer 11S is made by ion-implanting nitride (N₂) asimpurities under conditions of 20 keV to 100 keV energy and a doseamount of 1×10¹⁴ atoms/cm². Alternatively, inactive atoms such as argon(Ar) may be used as impurities.

The insulating film 12S functions as a passivation film (protectivefilm) covering the side surfaces of the device function layer 4 andbuffer layer 3. The insulating film 12S is made by using a part of aperiphery of the passivation film 12 which extends all over thepassivation film 10 on the device function layer 4. Alternatively, theinsulating film 12S may be made of a material different from thematerial of the passivation film 12, or may be positioned at a layerdifferent from the passivation film 12. For instance, if made of metaloxide such as titanium-oxide (TiO₂) and alumina (Al₂O₃), the insulatingfilm 12S inactivates the side surface of the main semiconductor layer20, and suppresses leakage and collapse of currents.

A bonding hole 12H is made in the passivation film 10 at upper parts ofthe external source terminal 7SP, external drain terminal 7DP andexternal gate terminal 7GP on the device function layer 4. Thepassivation film 10 is made of a silicon-oxide film. Alternatively, theinsulating film 12S and the passivation film 10 may be silicon nitridefilms which are relatively thick as tensile strength is applied, and areeasily worked upon. Such silicon-nitride films are 0.3 μm to 2.0 μmthick, for instance.

The ion implanting layer 11S and insulating film 12S are preferablyplaced near the hetero-junction interface between the GaN layer 41 andAlGaN layer 42 where the two-dimensional electron gas layer 43 is made.Further, it is preferable that the ion implanting layer 11S and theinsulating film 12S extend to the side surface of the buffer layer 3,and covers the side surfaces of the buffer layer 3 and the devicefunction layer 4. For instance, when the HEMT is out of operation in theforegoing semiconductor device 1, it is possible to suppress currentsleaking from the ohmic electrode 5D (drain electrode) to the ohmicelectrode 5S (source electrode) via the buffer layer 3, the substrate 2and the two-dimensional electron gas layer 43 near the side surface ofthe device function layer 4.

[Semiconductor Device Manufacturing Method and Structure of Wafer]

The semiconductor device 1 is manufactured as described hereafter.Further, the structure of the wafer is also described.

A wafer 2W is prepared first of all (refer to FIG. 3). In the firstembodiment, the wafer 2W is a single-crystal Si wafer made of a IV groupsemiconductor material. As shown in FIG. 3, a semiconductor layerforming layer 20A including the buffer layer 3 and the device functionlayer 4 is formed on the main surface of the wafer 2W using theepitaxial growth process. The term “main surface” of the wafer 2Wdenotes a crystalline surface of the monocrystal Si wafer (111), or isused in the context of an epitaxial growth layer of the semiconductorforming layer. The “main surface” of the substrate 2 is the same as themain surface of the wafer 2W. The buffer layer 3 extends over the mainsurface of the wafer 2W, and is made of AlN layers and GaN layers whichare alternately stacked. The device function layer 4 is made of GaNlayers 41 extending over the buffer layer 3, and the AlGaN layers 42 onthe GaN layers 41. The manufacturing conditions and thicknesses of thebuffer layer 3 and device function layer 4 are the same as thosementioned above.

Referring to FIG. 4, at the area where the device function layer 4 (aswell as the buffer layer 3) is formed, the ohmic electrodes 5S and 5Dare formed on the AlGaN layer 42 at the top of the semiconductor forminglayer 20A. The ohmic electrodes 5S and 5D are made of composite layersof Ti films and Al films on the Ti films. The Ti and Al films areprepared by the sputtering process. Further, the ohmic electrodes 5D and5S are patterned by an etching process using an ordinaryphotolithographic mask, or by the lift-off process.

The passivation film 6 is formed all over the semiconductor forminglayer 20A including the ohmic electrodes 5S and 5D (refer to FIG. 5).The passivation film 6 is made of a silicon oxide film prepared by thePE-CVD process. Thereafter, connection holes 6HG of the passivation film6 are made at the area where the gate electrodes 7G are made (refer toFIG. 5). The connection holes 6HG are made by the etching process usinga photolithographic mask.

Referring to FIG. 5, the gate electrode 7G is made on the passivationfilm 6, and is connected, by the Schottky junction, to the surface ofthe AlGaN layer 42 of the semiconductor forming layer 20A. The gateelectrode 7G is constituted by an Ni film and an Au film placed on theNi film. The Ni film is made by the sputtering process while the Au filmis made by the plating process. The gate electrode 7G is etched andpatterned using an ordinary photolithographic mask.

As shown in FIG. 6, the passivation film 10 as well as the semiconductorforming layer 20A is placed all over the gate electrode 7G. Thepassivation film 10 is a silicon nitride film prepared by the PE-CVDprocess, for instance.

A mask 20M (shown by dashed lines in FIG. 7) is made all over thepassivation film 10. The mask 20M has openings at a part thereof. Ineach opening are formed a dicing area 103 of the wafer 2W (shown in FIG.7 and FIG. 11) and the peripheral area 101 of the semiconductor device1. The opening of the mask 20M should be larger than the dicing area103. Referring to FIG. 11, each dicing area 103 includes a plurality ofdicing parts 103(1) and a plurality of dicing parts 103(2). The dicingparts 103(1) extend in the first direction from the upper part to thelower part of the main surface of the wafer 2W, and are arranged atgiven intervals in the second direction from left to right. The dicingparts 103(2) extend in the first direction, and are arranged at givenintervals in the first direction. The mask 20M is practically aphotoresist film, for instance.

Referring to FIG. 7, the passivation films 10 and 6 which are exposedvia the opening of the mask 20M are partially etched out in succession,so that a part (the dicing area 103 and the peripheral area 101) isexposed on the semiconductor forming layer 20A. The wet etching isapplied to the foregoing process, for instance.

As shown in FIG. 8, the exposed part of the semiconductor forming layer20A is mesa-etched to the main surface of the wafer 2W by using the mask20M as it is, thereby obtaining the semiconductor layer 20 which issegmented from the semiconductor forming layer 20A. In other words, themain semiconductor layer 20 includes the device function layers 4 andthe buffer layers 3. On the main surface of the wafer 2W, the devicefunction layers 4 and buffer layers 3 are segmented in the first andsecond directions, and are in the shape of the mesa, i.e. have a flattop and steep sides. The inductively coupled plasma dry etching process(ICP-DE) is practically usable to etch the device function layers 4 andbuffer layers 3 in the shape of the mesa. Usually, the mesa-etching iscarried out until the main surface of the wafer 2W is exposed. However,some over-etching is acceptable. As a result of the mesa-etching to thesurface of the wafer 2W, only the wafer 2W is diced during thesegmentation process. Since the side surfaces of the device functionlayers 4 are apart from the dicing areas 103, no crack will be caused onthe side surface of the device function layers 4 because of thesegmentation.

After the mask 20M is removed, a mask 21M (shown by dashed lines in FIG.9) is formed on the passivation film 10 (see FIG. 9). The mask 21M hasan opening via which the side surfaces of the device function layer 4and the buffer layer 3 are exposed. The mask 21M is practically aphotoresist film. As shown in FIG. 9, the ion implanting layer 11S ismade on a part of the device function layer 4 and the buffer layer 3.For this purpose, impurities are implanted into side surfaces of thedevice function layer 4 and the buffer layer 3. In the first embodiment,inactive atoms like N₂ or Ar may be practically used as the impurities.

Following the removal of the mask 21M, the passivation film 12 is formedall over the dicing area 103, peripheral area 101, and upper and lowersurfaces of the device function layer 4, and wafer 2W (refer to FIG.10). The passivation film 12 functions as the insulating film 12S andextends along the side surface of the main semiconductor layer 20. Thepassivation film 10 and the insulating film 12S at a part of thepassivation film 10 and may be silicon nitride films which are preparedby the PE-CVD process in such a manner that they have tensile strength.Referring to FIG. 10, on the upper part of the device function layer 4,upper parts of the passivation film 12, external source terminal 7SP,external drain terminal 7DP and external gate terminal 7 are removed,and the bonding opening 12H is made. While making the bonding hole 12Hin the first embodiment, the passivation film 12 is also removed fromthe dicing area 103, so that the main surface of the wafer 2W isexposed. It is not necessary to add a process for removing thepassivation film 12. Making of the bonding hole 12H and partial removalof the passivation film 12 are practically executed by the wet etchingprocess. In the first embodiment, the passivation film 12 is removedfrom an area between the dicing area 103 and a part of the peripheralarea 101.

FIG. 11 is the top plan view of the wafer 2W which has undergone themanufacturing process shown in FIG. 10. Specifically, the semiconductorforming area defined by two dicing parts 103(1) adjacent in the seconddirection and two dicing parts 103(2) adjacent in the first directionare used for making the semiconductor device 1. A plurality ofsemiconductor forming areas are arranged in the first and seconddirections. In each semiconductor forming area are arranged theperipheral area 101 extending around the dicing area 103 and the centralarea 102 surrounded by the peripheral area 103. The main semiconductorlayer 20 is placed in the central area 102.

In the dicing area 103, the wafer 2W is segmented, thereby completingthe semiconductor device 1 according to the first embodiment.

[Features of First Embodiment]

In the semiconductor device 1 and the wafer 2W which is an intermediateproduct of the semiconductor device 1, the peripheral area 101 isexposed, and the semiconductor layer 20 which is harder than the wafer2W is placed at the central area 102. In other words, in themanufacturing process, the semiconductor forming layer 20A ismesa-etched until it reaches the main surface of the wafer 2W. Thesegmented semiconductor layer 20 is obtained. The dicing area 103 of thewafer 2W is segmented in order to segment only the wafer 2W. The wafer2W is apart from the side surface of the main semiconductor layer 20 viaa sufficient margin between the dicing area 103 and the peripheral area101. Therefore, stress resulting from the segmentation is nottransmitted to the device function layer 4, which is effective inreducing cracks on the side surface of the device function layer 4.

The main semiconductor layer 20 in the shape of the mesa can improvestep coverage of the insulating film 12S. Further, the mainsemiconductor layer 20 and the insulating film 12S having steep sidescan weaken a longitudinal electric field. Still further, thesemiconductor layer 20 facilitates making of the ion implanting layer11S on the side surface of the semiconductor layer 20.

It is therefore possible to suppress increases of leakage currents andcollapse of currents caused by cracks, and to improve the high frequencyperformance of the HEMT installed in the semiconductor device 1. In thefirst embodiment, when the semiconductor device 1 is packaged in asemiconductor device, a connection between the source side ohmicelectrode 5S of the HEMT and the substrate 2 is short-circuited. Thesource side ohmic electrode 5S and the substrate 2 are used to supplypower having a longitudinally high voltage of 600 V, for instance. Thisis effective in suppressing the leakage and collapse of currents.

In the first embodiment, the ion implanting layer 11S and the insulatingfilm 12S on the side surface of the device function layer 4 of the mainsemiconductor layer 20 are effective in extensively suppressing theleakage currents and collapse of currents. The semiconductor layer 20 ofthe first embodiment is provided with the ion implanting layer 11S andthe insulating film 12S on the foregoing side surfaces. Alternatively,the semiconductor layer 20 may have only the ion implanting layer 11S orthe insulating film 12S.

Second Embodiment

A second embodiment of the invention relates to a modified example ofthe semiconductor device manufacturing process of the first embodiment.

[Semiconductor Device Manufacturing Method]

In the second embodiment, the semiconductor manufacturing method differsfrom the manufacturing method shown in FIG. 7 in connection with thefirst embodiment. Specifically, the passivation films 10 and 6 exposedvia the opening of the mask 20M are partially removed in succession bythe etching process. Thereafter, the mask 20M is removed.

A new mask 20M is made on the passivation film 10, and has an opening inthe main semiconductor forming layer 20A at the dicing area 103 and theperipheral area 101 (see FIG. 12). The mask 20M is practically aphotoresist film, for instance.

Referring to FIG. 12, a part of the main semiconductor forming layer 20Aexposed via the mask 20M is mesa-etched until it reaches the mainsurface of the wafer 2W, thereby making the main semiconductor forminglayer 20A including the buffer layer 3 and device function layer 4 whichare segmented from the main semiconductor forming layer 20A. The ICP-DEprocess using a chlorine group gas is practically used for themesa-etching. Further, the mesa-etching is performed to the surface ofthe wafer 2W, so that only the wafer 2W is diced in the segmentationprocess. Since the dicing area 103 is apart from the side surface of themain semiconductor layer 20, the main semiconductor layer 20 is freefrom cracks resulting from the scribing process.

The processes shown in FIG. 9 and FIG. 10 will be executed, so that thesemiconductor device 1 of the second embodiment will be completed.

The semiconductor device 1 and the manufacturing method of the secondembodiment are as effective as the semiconductor device 1 and themanufacturing method of the first embodiment.

Third Embodiment

In a third embodiment of the invention, a semiconductor device 1includes a metal semiconductor field effect transistor (MESFET) in placeof the HEMT of the semiconductor device 1 of the first or secondembodiment.

Similarly to the semiconductor device 1 of the first embodiment, thesemiconductor device 1 (shown in FIG. 13) of the third embodimentincludes: a substrate 2 having a central area 102 and a peripheral area101 exposed around the central area 102; a main semiconductor layer 20which is made of a material harder than the substrate 2, is placed on amain surface of the substrate 2, is mesa-shaped on the exposed area ofthe peripheral area 101; and an insulating film 12S on the side surfaceof the main semiconductor layer 20.

The substrate 2 in the third embodiment is a single-crystal Si substratemade of a IV group semiconductor material. The semiconductor layer 20includes a buffer layer 3 and a device function layer 41 a. The devicefunction layer 41 a is harder than the substrate 2, and is made of anitride group semiconductor material such as an AlGaN layer or InGaNlayer. A metal semiconductor field effect transistor (MESFET) isprovided on the device function layer 41 a.

The MESFET is constituted by: the device function layer 41 a where achannel region is formed; a pair of ohmic electrodes 5S and 5D which areprovided on the device function layer 41 a and are apart from eachother; and the gate electrode 7G which is provided on the devicefunction layer 41 a and between the ohmic electrodes 5S and 5D.

The semiconductor device 1 of the third embodiment is as effective asthe semiconductor device 1 of the first or second embodiment. Further,the semiconductor device manufacturing method of this embodiment is aseffective as that of the first or second embodiment.

Other Embodiments

While the invention has been illustrated and described by means ofspecific embodiments and applications thereof, numerous modificationsand variations could be made thereto without departing from the scope ofthe invention set forth in the claims.

In the foregoing embodiments, the substrate 2 (or wafer 2W) is thesingle-crystal Si substrate, and the main semiconductor layer 20 is thenitride group semiconductor. Alternatively, the main semiconductor layer20 may be made of a material which is harder than the substrate 2. Forinstance, the substrate 2 may be an Si substrate or a GaAs substratewhich is one of typical III-V group compound semiconductor materials,and the device function layer 4 of the main semiconductor layer 20 maybe made of an SiC device function layer, a nitride group device functionlayer, and so on.

Further, the Shottoky electrodes are exemplified as the gate electrodes.Alternatively, the gate electrodes may have an MIS gate structure or arecess gate structure which is known as a normally-off-structure.Further, the present invention is not always limited to thesemiconductor device including the FET, but is also applicable tosemiconductor devices including Shottky diodes or the like.

Still further, the ion implanting layer 11S and the insulating film 12S,which are provided on the side surfaces of the buffer layer 3 and thedevice function layer 4 or 41 a, may be replaced by an insulating filmwhich is made by partly oxidizing the side surfaces of the buffer layer3 and the device function layer 4 or 41 a. Further, the buffer layer 3may be omitted in the present invention.

1. A semiconductor device comprising: a substrate having on a mainsurface a central area and a peripheral area which surrounds the centralarea; a semiconductor layer formed on the main surface of the substrate,the semiconductor layer being made of a material harder than thesubstrate, and having a side at the peripheral area; and a resistancelayer having a resistance value higher than a resistance value of thesemiconductor layer, the resistance layer being formed on a side of thesemiconductor layer.
 2. The semiconductor device according to claim 1,wherein the substrate is made of a IV group or a III-V group compoundsemiconductor material, and the semiconductor layer includes nitridegroup semiconductor layers.
 3. The semiconductor device according toclaim 1, wherein the resistance layer is an ion implanting layer whichsuppresses leakage currents.
 4. The semiconductor device according toclaim 1, wherein the resistance layer includes a higher density ofcrystal defects than the semiconductor layer.
 5. The semiconductordevice according to claim 3, wherein the ion implanting layer includes ahigher density of crystal defects than the semiconductor layer.
 6. Thesemiconductor device according to claim 1, further comprising aninsulating film provided on the side of the semiconductor layer and onthe resistance layer.
 7. The semiconductor device according to claim 1,wherein the semiconductor layer has a steep side exposed on theperipheral area.
 8. The semiconductor device according to claim 1,wherein the semiconductor layer is in a shape of a mesa.
 9. Thesemiconductor device according to claim 1, wherein the semiconductorlayer has a hetero junction, and includes a two-dimensional electron gaslayer near an interface of the hetero junction.
 10. The semiconductordevice according to claim 1, wherein the resistance layer is formed bynitride (N₂) being implanted as an impurity into the side surface of thesemiconductor layer.
 11. The semiconductor device according to claim 3,wherein the ion implanting layer is formed by nitride (N₂) beingimplanted as an impurity into the side surface of the semiconductorlayer.